3.0 a 0.02 unit characteristic symbol 80 a v 250 pf 20 c/w -65 to +150 c sb320 ? sb3200 3.0a schottky barrier diode features ! schottky barrier chip ! guard ring die construction for transient protection ! high current capability a b a ! low power loss, high efficiency ! high surge current capability ! for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications c d mechanical data ! case: do-201ad, molded plastic ! terminals: plated leads solderable per mil-std-202, method 208 ! polarity: cathode band ! weight: 1.2 grams (approx.) ! mounting position: any ! marking: type number ! lead free: for rohs / lead free version, maximum ratings and electrical characteristics @t a =25c unless otherwise specified single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r rms reverse voltage v r(rms) average rectified output current @t l = 95c (note 1) i o non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm forward voltage @i f = 3.0a v fm peak reverse current @t a = 25c at rated dc blocking voltage @t a = 100c i rm 0.5 20 ma typical junction capacitance (note 2) c j typical thermal resistance (note 1) r ja operating and storage temperature range t j , t stg note: 1. valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. measured at 1.0 mhz and applied reverse voltage of 4.0v d.c. do-201ad dim min max a 25.4 ? b 7.20 9.50 c 1.20 1.30 d 4.80 5.30 all dimensions in mm 1 of 2 sb320 ? sb3200 v sb320 sb330 sb340 sb350 sb360 SB380 sb3100 sb3150 sb3200 10 0.5 0.75 0.85 0.92 v 20 14 30 21 40 28 50 35 60 42 80 56 100 70 150 105 200 140 z ibo seno electronic engineering co., ltd. www.senocn.com sb320 ? sb3100 1 of 4 ? 2006 won-top electronics pb sb320 ? sb3100 3.0a schottky barrier diode features ! schottky barrier chip ! guard ring die construction for transient protection ! high current capability a b a ! low power loss, high efficiency ! high surge current capability ! for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications c d mechanical data ! case: do-201ad, molded plastic ! terminals: plated leads solderable per mil-std-202, method 208 ! polarity: cathode band ! weight: 1.2 grams (approx.) ! mounting position: any ! marking: type number ! lead free: for rohs / lead free version, add ?-lf? suffix to part number, see page 4 maximum ratings and electrical characteristics @t a =25c unless otherwise specified single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. characteristic symbol sb320 sb330 sb340 sb350 sb360 SB380 sb3100 unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 20 30 40 50 60 80 100 v rms reverse voltage v r(rms) 14 21 28 35 42 56 70 v average rectified output current @t l = 95c (note 1) i o 3.0 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 80 a forward voltage @i f = 3.0a v fm 0.50 0.75 0.85 v peak reverse current @t a = 25c at rated dc blocking voltage @t a = 100c i rm 0.5 20 ma typical junction capacitance (note 2) c j 250 pf typical thermal resistance (note 1) r ja 20 c/w operating and storage temperature range t j , t stg -65 to +150 c note: 1. valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. measured at 1.0 mhz and applied reverse voltage of 4.0v d.c. wte power semiconductors do-201ad dim min max a 25.4 ? b 7.20 9.50 c 1.20 1.30 d 4.80 5.30 all dimensions in mm free datasheet http:///
0 16 32 48 64 80 1 10 100 i , peak forward surge current (a) fsm number of cycles at 60 hz fig. 3 max non-repetitive peak fwd surge current single half-sine-wave (jedec method) t = 100 c j 10 100 1000 0.1 110 100 c , capacitance (pf) j v , reverse voltage (v) fig. 4 typical junction capacitance r f=1.0mhz t = 25 c j 0 20 40 60 80 100 120 140 i , ins t an t aneou s revers e curren t (ma) r percent of rated peak reverse voltage (%) fig. 5 typical reverse characteristics t = 100 c j t = 75 c j t = 25 c j 100 10 1.0 0.1 0.01 1k 0.01 0.1 1.0 10 0 0.2 0.4 0.6 0.8 1.0 i , instantaneous forward current (a) f v , instantaneous forward voltage (v) fig. 2 typical forward characteristics f 100 2 of 2 sb320 ? sb3200 sb320 ? sb3200 sb320 ? sb340 sb350 ? sb360 SB380 ? sb3200 z ibo seno electronic engineering co., ltd. www.senocn.com 0 0.5 1.0 25 50 75 100 125 150 i average forward current (a) o, t , lead temperature ( c) fig. 1 forward current derating curve l 1.5 2.0 2.5 3.0 sb320 ? sb3100 2 of 4 ? 2006 won-top electronics 0 16 32 48 64 80 1 10 100 i , peak forward surge current (a) fsm number of cycles at 60 hz fig. 3 max non-repetitive peak fwd surge current single half-sine-wave (jedec method) t = 100 c j 10 100 1000 0.1 110 100 c , capacitance (pf) j v , reverse voltage (v) fig. 4 typical junction capacitance r f=1.0mhz t = 25 c j 0 20 40 60 80 100 120 140 i , ins t an t aneou s revers e curren t (ma) r percent of rated peak reverse voltage (%) fig. 5 typical reverse characteristics t = 100 c j t = 75 c j t = 25 c j 100 10 1.0 0.1 0.01 1k 0.01 0.1 1.0 10 0 0.2 0.4 0.6 0.8 1.0 i , instantaneous forward current (a) f v , instantaneous forward voltage (v) fig. 2 typical forward characteristics f 100 sb320 - sb340 sb35 0- sb360 0 0.5 1.0 25 50 75 100 125 150 i average forward current (a) o, t , lead temperature ( c ) fig. 1 forward current derating curve l 1.5 2.0 2.5 3.0 sb3 8 0- sb3 1 0 0 free datasheet http:///
|
